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Structure and optical properties of ZnSeO alloys with O composition up to 6.4%

✍ Scribed by Y. Nabetani; T. Mukawa; T. Okuno; Y. Ito; T. Kato; T. Matsumoto

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 543 KB
Volume: 6
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2003.08.007

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✦ Synopsis

II-VI-O type alloy semiconductor ZnSeO (O composition up to 6.4%) is grown by molecular beam epitaxy. O composition increases with O 2 flow rate. Several XRD peaks are observed when O composition is 2-4%, indicating phase separation. Growth at low temperature results in higher O composition. Photoluminescence intensity of ZnSeO lattice matched to GaAs is much stronger than that of ZnSe and peak shifts to lower energies with increasing O composition. Photoreflectance spectroscopy is performed to investigate the band gap energy. The band gap energy investigated by photoreflectance decreases with increasing O composition due to large band gap bowing even when phase separation occurs. The bowing parameter is estimated as 8.4 eV.

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