## Abstract For Abstract see ChemInform Abstract in Full Text.
Structure and Electrical Conductivity of AgTaS3
β Scribed by Changkeun Kim; Hoseop Yun; Youngju Lee; Heekyoon Shin; Kwangkyoung Liou
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 260 KB
- Volume
- 132
- Category
- Article
- ISSN
- 0022-4596
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β¦ Synopsis
Single crystals of the compound AgTaS 3 have been prepared through reactions of the elements with halide mixtures. The structure of AgTaS 3 has been analyzed by single-crystal X-ray diffraction methods. AgTaS 3 crystallizes in the space group D 17 2h -Cmcm of the orthorhombic system with four formula units in a cell of dimensions aβ«,)2(873.3Ψβ¬ bβ«,)5(070.41Ψβ¬ cβ«)3(657.7Ψβ¬ A > . The structure of AgTaS 3 consists of two-dimensional 2
[TaS Ψ 3 ] layers separated by Ag Ψ cations. The layer is composed of Ta-centered bicapped trigonal prisms stacked on top of each other by sharing triangular faces. These chains are linked to form the infinite two-dimensional 2
[TaS Ψ 3 ] slabs. These layers are held together through van der Waals interactions, and Ag Ψ ions reside in the distorted octahedral sites between the layers. The temperature dependence of the electrical conductivity along the needle axis of AgTaS 3 shows the typical behavior of an extrinsic semiconductor.
π SIMILAR VOLUMES
Polyaniline (PAn) was synthesized chemically and doped with various dopants, such as HCl, HCOOH, and methylene blue S), by an I 2 (C 16 H 18 ClN 3 immersion method. The structure of these samples was investigated by infrared (IR) spectroscopy and wide-angle X-ray di β raction (WAXD) analysis. Remarka