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Structural, optical and magnetic properties of Ga 1− x Mn x N films grown by MOCVD

✍ Scribed by Yang, X L; Chen, Z T; Zhao, L B; Zhu, W X; Wang, C D; Pei, X D; Zhang, G Y

Book ID
121232791
Publisher
Institute of Physics
Year
2008
Tongue
English
Weight
275 KB
Volume
41
Category
Article
ISSN
0022-3727

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## Abstract For both, (Al,Ga)N with low Al content grown on a GaN nucleation layer and (Al,Ga)N with high Al content gown on an AlN nucleation layer, the inhomogeneous distribution of the luminescence is linked to the distribution of defects, which may be due to inversion domains. In the former sys