Structural, electrical and optical properties of ZnS films deposited by close-spaced evaporation
β Scribed by Y.P. Venkata Subbaiah; P. Prathap; K.T. Ramakrishna Reddy
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 544 KB
- Volume
- 253
- Category
- Article
- ISSN
- 0169-4332
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π SIMILAR VOLUMES
A parameter set was found which allows depositing ZnSe thin films with good properties to be used as buffer layer in solar cells with ZnO/ZnSe/CIGS structure. In this way, the ZnSe compound could be used in substitution of the CdS which is a toxic material generally used as buffer layer in Cu(In,Ga)
Thin films of intrinsic and Al-doped ZnO were prepared by the sol-gel technique associated with spin coating onto glass substrates. Zinc acetate dehydrate, ethanol and monoethanolamine were used as a starting material, solvent and stabiliser, respectively. Structural, electrical and optical characte