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Structural Disorder Model of Amorphous Semiconductors: Ge and Si

โœ Scribed by B. A. Vaid; K. C. Sharma

Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
460 KB
Volume
122
Category
Article
ISSN
0370-1972

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๐Ÿ“œ SIMILAR VOLUMES

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## Abstract The structural disorder model of amorphous semiconductors, near the amorphous to crystalline transition, recently proposed, is generalized for triply coordinated As. The model is able to explain at least qualitatively the change in enthalpy and the configurational entropy during transit

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