Structural characterization of amorphous hydrogenated-carbon nitride (aH-CNx) film deposited by CH4/N2 dielectric barrier discharge plasma: 13C, 1H solid state NMR, FTIR and elemental analysis
✍ Scribed by Abhijit Majumdar; Gudrun Scholz; Rainer Hippler
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 321 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0257-8972
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✦ Synopsis
analysis (chemical)
The chemical composition and bond structure of polymer like amorphous hydrogenated carbon nitride (aH-CN x ) thin films was studied by solid-state 13 C and 1 H MAS NMR spectroscopy, FTIR spectroscopy and elemental analysis. The hydrogenated CN x film was deposited on Si (100) substrate by CH 4 /N 2 gas mixture dielectric barrier discharge (DBD) plasma. The broad 1 H signals obtained even at 33 kHz spinning speed with spinning side bands indicates the existence of a large proton proportion in the film. The 1 H and 13 C signals are strongly broadened due to homo-and heteronuclear dipolar couplings and also due to amorphous nature of the deposited film. The local structure of the amorphous aH-CN x film is dominated by C-C and C-N single bonds i.e. carbon is mainly in the sp 3 hybridized state. The Fourier Transform infrared (FTIR) spectroscopy of the film indicates the typical regions for -C≡N, -(CfO), -NH, vibrations together with overlapping NH and OH stretching bonds. CH 3 and C-N groups as well as species with CfN conjugated double bonds are present in the deposited CN x film. From elemental analysis it is obtained that the composition of the film is (in wt.%):