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Structural characterization of amorphised InAs with synchrotron radiation

✍ Scribed by G.de M. Azevedo; M.C. Ridgway; K.M. Yu; C.J. Glover; G.J. Foran

Book ID
114165614
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
97 KB
Volume
190
Category
Article
ISSN
0168-583X

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Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 MeV Si ions over a different fluence range (2 Γ‚ 10 11 -2 Γ‚ 10 13 cm Γ€2 ) than previously reported. Size and depth distributions as well as structural disorder in the NCs were measured by RBS, TEM, SAX