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Structural changes in ZnS crystals on account of partial dislocation movement

โœ Scribed by Kulakov, M. P. ;Shmurak, S. Z.


Publisher
John Wiley and Sons
Year
1980
Tongue
English
Weight
883 KB
Volume
59
Category
Article
ISSN
0031-8965

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Single crystals of undoped and 1% Zn-doped Bi-2212 are grown by self-flux slow cooling method under similar growth conditions. T c (DT c ) are found to be 84 K (2 K) and 82 K (8 K) for undoped and doped samples respectively. Effect of Zn doping on structure and modulation is studied. Different chang