๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Structural and vibrational properties of carbon impurities in crystalline silicon

โœ Scribed by Zhu, Xiao Yan; Lee, Seung Mi; Kim, Jae Yon; Lee, Young Hee; Chung, Dong-Chul; Frauenheim, Thomas

Book ID
121478165
Publisher
Institute of Physics
Year
2001
Tongue
English
Weight
145 KB
Volume
16
Category
Article
ISSN
0268-1242

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Structural and electrical properties of
Structural and electrical properties of metal impurities at dislocations in silicon
โœ Seibt, M. ;Kveder, V. ;Schrรถter, W. ;VoรŸ, O. ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 363 KB

## Abstract The electrical properties of silicon materials containing dislocations are strongly affected by deep levels at or close to the dislocation core. Such deep levels are frequently thought to be due to metal impurities that are chemically bound to the dislocation core, segregated in the lon