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Structural and optical study of GaMnAs/GaAs

✍ Scribed by Junling Yang; Nuofu Chen; Xiaoling Ye; Hongjia He

Book ID
111589916
Publisher
Springer
Year
2004
Tongue
English
Weight
168 KB
Volume
39
Category
Article
ISSN
0022-2461

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## Abstract A self‐limiting mechanism in atomic layer epitaxy (ALE) has been investigated for the heterogrowth of GaMnAs on GaAs(001) substrate. In the ALE, trimethylgallium, bismethylcyclopentadienylmanganese and trisdimethylaminoarsine were used as source materials of gallium, manganese and arsen