Structural and magnetic phase transition in MnAs(0001)/GaAs(111) epitaxial films
✍ Scribed by Jenichen, B.; Kaganer, V. M.; Kästner, M.; Herrmann, C.; Däweritz, L.; Ploog, K. H.; Darowski, N.; Zizak, I.
- Book ID
- 120215461
- Publisher
- The American Physical Society
- Year
- 2003
- Tongue
- English
- Weight
- 203 KB
- Volume
- 68
- Category
- Article
- ISSN
- 1098-0121
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## Abstract MnAs layers with a 5 nm thick amorphous GaAs capping layer were grown epitaxially on GaAs(001). Generalized ellipsometric measurements were made on a 45 nm thick layer in the spectral range 1.5–4 eV at temperatures between –10 °C and 50 °C in steps of 5 °C. By using both the diagonal an
## Abstract MnAs layers with 45 nm thickness were grown epitaxially on GaAs(001) substrates. Ellipsometry measurements were made in the spectral range 0.045 eV to 6 eV as a function of temperature (between –10 °C and 50 °C) at 70° of incidence. In this way the transition from the hexagonal α‐phase