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Structural and electronic properties of InGaN/GaN nanowires by the use of EELS

✍ Scribed by Soumelidou, Maria-Marianna; Kioseoglou, Joseph; Kirmse, Holm; Komninou, Philomela; Karakostas, Theodoros

Book ID
118766667
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
534 KB
Volume
10
Category
Article
ISSN
1862-6351

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## Abstract A high indium‐content blue light‐emitting diode (LED) structure grown on silicon (111), consisting of five very thin MOCVD‐grown In~0.2~Ga~0.8~N quantum wells (QWs), is shown by high resolution transmission electron microscopy (HRTEM) to contain structural defects in the active region.