Electronic structure of oxygen vacancy i
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W.-J. Lee; B. Ryu; K.J. Chang
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Article
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2009
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Elsevier Science
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English
β 393 KB
We perform first-principles theoretical calculations to investigate the defect properties of oxygen vacancy (V O ) in crystalline InGaO 3 (ZnO) m (m ΒΌ 3). In a flat boundary structure, in which Ga atoms are located on a single plane, various configurations of V O exist. We find that neutral V O at a