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Structural and electronic properties of crystalline InGaO[sub 3](ZnO)[sub m]

✍ Scribed by Lee, W.-J.; Choi, E.-A.; Bang, J.; Ryu, B.; Chang, K. J.


Book ID
121722715
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
663 KB
Volume
93
Category
Article
ISSN
0003-6951

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Electronic structure of oxygen vacancy i
✍ W.-J. Lee; B. Ryu; K.J. Chang πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 393 KB

We perform first-principles theoretical calculations to investigate the defect properties of oxygen vacancy (V O ) in crystalline InGaO 3 (ZnO) m (m ΒΌ 3). In a flat boundary structure, in which Ga atoms are located on a single plane, various configurations of V O exist. We find that neutral V O at a