~men~f~haChemi~e~'Ur\*~si~9~Ia~c~`~hn~.~f~i~.H~a~anhu~.P~r doom oxides th= Ihah when thoy ~ scpamloly ~m. co,ld stabilize the Ire ~ha~ down to ~ Icmperatu~. R ~s ulso found thai in gencrM a smaU amount of a thJ~ o~id e did n~ chanSe the sl~ctu~ of the binam ~d~, ~t slightly inched its ~nductivity. A
Structural and electrochemical features of Bi2O3-based fast oxide ion conductors
โ Scribed by V. Fruth; G. Dobrescu; V. Bratan; C. Hornoiu; S. Preda; C. Andronescu; M. Popa
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 487 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0955-2219
No coin nor oath required. For personal study only.
โฆ Synopsis
Oxide ion conductors have been increasingly studied for many years because of their application in devices with high economical impact such as solid oxide fuel cells (SOFC), oxygen sensors, and dense ceramic membranes for oxygen separation, and membrane reactors for oxidative catalysis. New fast oxide ion conductors for low temperature applications (400-600 โข C) have been proposed during recent years.
The influence of Sb 2 O 3 and Ta 2 O 5 as on the Bi 2 O 3 structures and the corresponding electrical behavior were investigated. The powder products, obtained by solid state reactions, were characterized by XRD and SEM. They were sintered at different temperatures and the bulk ceramics were characterized and their electrical behavior versus temperature were recorded.
This investigation underlines the influence of the nature of dopants on the structures and electrical performances bismuth based oxides. For microstructure analysis the theory of fractals was used.
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