Structural and electrical properties of the GexSi1−x/Si heterojunctions obtained by the method of direct bonding

✍ Scribed by T. S. Argunova; E. I. Belyakova; I. V. Grekhov; A. G. Zabrodskiĭ; L. S. Kostina; L. M. Sorokin; N. M. Shmidt; J. M. Yi; J. W. Jung; J. H. Je; N. V. Abrosimov

• Book ID: 111443807
• Publisher: Springer
• Year: 2007
• Tongue: English
• Weight: 428 KB
• Volume: 41
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/s1063782607060127