✦ LIBER ✦

Structural and electrical properties of room temperature pulsed laser deposited and post-annealed thin SrRuO3 films

✍ Scribed by O. Gautreau; C. Harnagea; F. Normandin; T. Veres; A. Pignolet

Book ID: 108289519
Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 967 KB
Volume: 515
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2006.11.036

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Study of pulsed laser deposition of RuO2

Study of pulsed laser deposition of RuO2 and SrRuO3 thin films

✍ X. Fang; T. Kobayashi 📂 Article 📅 1999 🏛 Springer 🌐 English ⚖ 157 KB

Structural and optical properties of pul

Structural and optical properties of pulsed laser deposited SrBi2Nb2O9 thin films

✍ Kansong Chen; Haoshuang Gu 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 177 KB

Structural and electrical properties of

Structural and electrical properties of excimer laser deposited PLZT thin films

✍ Hsiu-Fung Cheng 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 245 KB

Effect of substrate temperature on struc

Effect of substrate temperature on structural, optical and electrical properties of ZnO thin films deposited by pulsed laser deposition

✍ Seong Jun Kang; Yang Hee Joung; Hyun Ho Shin; Yung Sup Yoon 📂 Article 📅 2007 🏛 Springer US 🌐 English ⚖ 486 KB

Structural and magnetic properties of pu

Structural and magnetic properties of pulsed laser deposited CoPt3 films

✍ E. Agostinelli; G. Varvaro; L. Del Bianco; D. Fiorani; P. Imperatori; G. Scavia; 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 194 KB

Electrical and optical properties of cop

Electrical and optical properties of copper-based chalcogenide thin films deposited by pulsed laser deposition at room temperature: Toward p-channel thin film transistor fabricable at room temperature

✍ Hiramatsu, Hidenori ;Yanagi, Hiroshi ;Kamiya, Toshio ;Hirano, Masahiro ;Matsunam 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 467 KB

## Abstract Copper‐based chalcogenide thin films deposited at room temperature were examined for exploring an active layer material for a p‐channel thin film transistor (TFT) fabricable at room temperature. The electrical conductivities of chalcopyrite and simple copper chalcogenide thin films were