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Structural and electrical characteristics of ZrO2–TiO2 thin films by sol–gel method

✍ Scribed by Cheng-Hsing Hsu; Ching-Fang Tseng; Chun-Hung Lai; Hsin-Han Tung; Shih-Yao Lin

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
558 KB
Volume
175
Category
Article
ISSN
0921-5107

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✦ Synopsis

In this paper, we investigated electrical properties and microstructures of ZrTiO 4 (ZrO 2 -TiO 2 ) thin films prepared by the sol-gel method on ITO substrates at different annealing temperatures. All films exhibited ZrTiO 4 (1 1 1) and (1 0 1) orientations perpendicular to the substrate surface, and the grain size increased with increase in the annealing temperature. A low leakage current density of 2.06 × 10 -6 A/cm 2 was obtained for the prepared films. Considering the primary memory switching behavior of ZrTiO 4 , ReRAM based on ZrTiO 4 shows promise for future nonvolatile memory applications.

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