Structural and defect characterization of GaAs and AlxGa1-xAs grown at low temperature by molecular beam epitaxy

✍ Scribed by Fleischer, S.; Beling, C. D.; Fung, S.; Nieveen, W. R.; Squire, J. E.; Zheng, J. Q.; Missous, M.

• Book ID: 118035374
• Publisher: American Institute of Physics
• Year: 1997
• Tongue: English
• Weight: 415 KB
• Volume: 81
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.364105