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Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

✍ Scribed by Gautier, S.; Moudakir, T.; Patriarche, G.; Rogers, D.J.; Sandana, V.E.; Hosseini Téherani, F.; Bove, P.; El Gmili, Y.; Pantzas, K.; Sundaram, Suresh; Troadec, D.; Voss, P.L.; Razeghi, M.; Ougazzaden, A.


Book ID
121182387
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
586 KB
Volume
370
Category
Article
ISSN
0022-0248

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