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Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple-quantum-well lasers

✍ Scribed by Czotscher, K.; Weisser, S.; Larkins, E. C.; Fleissner, J.; Ralston, J. D.; Schönfelder, A.; Rosenzweig, J.; Esquivias, I.

Book ID
121480848
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
255 KB
Volume
69
Category
Article
ISSN
0003-6951

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Strain effects on carrier lifetimes in I
Strain effects on carrier lifetimes in InGaAs/(Al)GaAs multiple quantum wells
✍ M.H. Moloney; J. Hegarty; L. Buydens; P. Demeester; R. Grey; J. Woodhead 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 379 KB

Lifetimes were measured in several InGaAs/(Al)GaAs samples with various levels of strain and strain relief, with thick barriers and with GaAs barriers. Lifetimes of the order of 0.5 ns were measured. We have found that the introduction of indium, to obtain InGaAs wells, causes a dramatic decrease in