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Stripping Hall effect, sheet and spreading resistance techniques for electrical evaluation of implanted silicon layers

✍ Scribed by Jumana Boussey


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
781 KB
Volume
40
Category
Article
ISSN
0167-9317

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✦ Synopsis


The objective of this chapter is to address the electrical characterization of silicon implanted layer. The determination of the electrical activity profiles, in terms of free carriers concentration and mobility, is described using spreading resistance and stripping Hall effect techniques. Several recent results are presented in order to show the importance of such experimental analysis