Stress-sensitive properties of silicon-gate MOS devices : Hiroaki Mikoshiba. Solid-St. Electron.24, 221 (1981)

• Publisher: Elsevier Science
• Year: 1981
• Tongue: English
• Weight: 120 KB
• Volume: 21
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(81)90171-2