✦ LIBER ✦
Stress-Induced Positive Charge in Hf-Based Gate Dielectrics: Impact on Device Performance and a Framework for the Defect
✍ Scribed by Zhao, C.Z.; Zhang, J.F.; Mo Huai Chang; Peaker, A.R.; Hall, S.; Groeseneken, G.; Pantisano, L.; De Gendt, S.; Heyns, M.
- Book ID
- 114619450
- Publisher
- IEEE
- Year
- 2008
- Tongue
- English
- Weight
- 456 KB
- Volume
- 55
- Category
- Article
- ISSN
- 0018-9383
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