Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiation

Molecular-beam epitaxial growth of Ge/Si

Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation

✍ Zh.V. Smagina; P.L. Novikov; V.A. Zinovyev; V.A. Armbrister; S.A. Teys; A.V. Dvu 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 584 KB

Joint experimental and theoretical study of low-energy ion-beam-assisted Ge growth on Si has been carried out. Pulsed ion-beam action results in the increase of Ge nanoislands density and decrease of average island size and size dispersion. The effect is interpreted in terms of ion-beam-induced form