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Stress-induced-dichroism of the 648.2- and 1819.5-cm−1 infrared absorption lines of oxygen in silicon

✍ Scribed by Hideki Takahashi; Hiroshi Yamada-Kaneta; Masashi Suezawa


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
200 KB
Volume
340-342
Category
Article
ISSN
0921-4526

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