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Stress characterization of device layers and the underlying Si1−xGexvirtual substrate with high-resolution micro-Raman spectroscopy

✍ Scribed by W. M. Chen; P. J. McNally; G. D. M. Dilliway; J. Bonar; T. Tuomi; A. F. W. Willoughby


Book ID
111537512
Publisher
Springer US
Year
2003
Tongue
English
Weight
255 KB
Volume
14
Category
Article
ISSN
0957-4522

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