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Strains in ZnSxSe1–x films grown on (001)-GaAs substrates

✍ Scribed by Nobuo Itoh; Keiichi Okamoto; Haruki Ogawa; Toshiharu Kawabata; Susumu Koike

Book ID
107925664
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
302 KB
Volume
33-34
Category
Article
ISSN
0169-4332

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✍ de Sales, F.V. ;Soler, M.A.G. ;Ugarte, D. ;Quivy, A.A. ;da Silva, S.W. ;Martini, 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB 👁 2 views

In this study the influence of the interface morphology upon the photoluminescence of thick InGaAs/GaAs strained quantum wells has been investigated. Samples grown by molecular beam epitaxy, using GaAs (001) substrates with a miscut of 6 towards (111)A, have been studied using low temperature photol