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Strain‐induced shift in photoluminescence energy in In0.2Ga0.8As/GaAs quantum wires

✍ Scribed by Tentarelli, E. S.; Reed, J. D.; Chen, Y.‐P.; Schaff, W. J.; Eastman, L. F.


Book ID
118231171
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
834 KB
Volume
78
Category
Article
ISSN
0021-8979

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Energy sublevels in an Al0.5Ga0.5As/GaAs
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We report the successful fabrication of a V-groove Al 0.5 Ga 0.5 As/GaAs/Al 0.5 Ga 0.5 As quantum wire system and the temperature-dependent photoluminescence (PL) measurement. The PL spectra are dominated by four features at 681, 642, 635 and 621 nm attributed to the luminescences from quantum wire,