Strained-silicon MOSFETs for analog applications: utilizing a supercritical-thickness strained Layer for low leakage current and high breakdown Voltage

✍ Scribed by Kondo, M.; Sugii, N.; Miyamoto, M.; Hoshino, Y.; Hatori, M.; Hirasawa, W.; Kimura, Y.; Kimura, S.; Kondo, Y.; Yoshida, I.

• Book ID: 114618252
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 433 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.872892