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Strained-silicon MOSFET process technology—control of impurity and germanium atoms at the hetero-interface

✍ Scribed by Nobuyuki Sugii; Yoshinobu Kimura; Shin’ichiro Kimura; Shigefumi Irieda; Jun Morioka; Taroh Inada


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
320 KB
Volume
8
Category
Article
ISSN
1369-8001

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