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Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation

✍ Scribed by Rumyantsev, S L; Fobelets, K; Veksler, D; Hackbarth, T; Shur, M S

Book ID: 121853200
Publisher: Institute of Physics
Year: 2008
Tongue: English
Weight: 208 KB
Volume: 23
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/23/10/105001

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