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Strained-layer InGaAsP diode lasers with tapered gain region for operation at /spl lambda/=1.3 /spl mu/m

โœ Scribed by Groves, S.H.; Donnelly, J.P.; Walpole, J.N.; Woodhouse, J.D.; Missaggia, L.J.; Bailey, R.J.; Napoleone, A.


Book ID
119784494
Publisher
IEEE
Year
1994
Tongue
English
Weight
299 KB
Volume
6
Category
Article
ISSN
1041-1135

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