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Strain relaxation effect on electronic properties of compressively strained InGaAs/InP vertically stacked multiple quantum wires

✍ Scribed by Park, Seoung-Hwan; Shim, Jong-In; Yi, Sam Nyung

Book ID: 120657222
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 389 KB
Volume: 108
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3456073

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