Strain relaxation dependent island nucleation rates during the Stranski–Krastanow growth of GaN on AlN by molecular beam epitaxy

✍ Scribed by Koblmüller, G.; Averbeck, R.; Riechert, H.; Hyun, Y.-J.; Pongratz, P.

• Book ID: 121311152
• Publisher: American Institute of Physics
• Year: 2008
• Tongue: English
• Weight: 514 KB
• Volume: 93
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.3046730