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Strain rate dependence of hardness of AlN doped SiC

✍ Scribed by Vandeperre, L J; Ur-Rehman, N; Brown, P

Book ID
124089066
Publisher
Maney Publishing
Year
2010
Tongue
English
Weight
247 KB
Volume
109
Category
Article
ISSN
1743-6753

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## Abstract AlN doped SiC films were deposited on on‐axis Si‐face 4H‐SiC (0001) substrates by the physical vapor transport (PVT) method. Thick film in the range of 20 ΞΌm range was grown and morphology was characterized. Films were grown by physical vapor deposition (PVD) in a vertical geometry in t