Strain-Induced Effects in Advanced MOSFETs

✍ Scribed by Viktor Sverdlov (auth.)

• Publisher: Springer-Verlag Wien
• Year: 2011
• Tongue: English
• Leaves: 268
• Series: Computational Microelectronics
• Edition: 1
• Category: Library

✦ Synopsis

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given

✦ Table of Contents

Front Matter....Pages i-xiv
Introduction....Pages 1-3
Scaling, Power Consumption, and Mobility Enhancement Techniques....Pages 5-22
Strain and Stress....Pages 23-34
Basic Properties of the Silicon Lattice....Pages 35-44
Band Structure of Relaxed Silicon....Pages 45-62
Perturbative Methods for Band Structure Calculations in Silicon....Pages 63-81
Strain Effects on the Silicon Crystal Structure....Pages 83-90
Strain Effects on the Silicon Band Structure....Pages 91-103
Strain Effects on the Conduction Band of Silicon....Pages 105-121
Electron Subbands in Silicon in the Effective Mass Approximation....Pages 123-129
Electron Subbands in Thin Silicon Films....Pages 131-167
Demands of Transport Modeling in Advanced MOSFETs....Pages 169-237
Back Matter....Pages 239-252

✦ Subjects

Electronics and Microelectronics, Instrumentation