Influence of anisotropic strain on excit
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C. Buchheim; M. RΓΆppischer; R. Goldhahn; G. Gobsch; C. Cobet; C. Werner; N. Esse
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Article
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2009
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Elsevier Science
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English
β 163 KB
Hexagonal a-plane GaN films with Γ°1 1 2 0Γ-orientation were grown by metalorganic vapour phase epitaxy on r-plane sapphire substrates. Spectroscopic ellipsometry in the photon energy range from 1.2 up to 5 eV was applied in order to determine the ordinary and extraordinary complex dielectric functio