Strain Effect in Semiconductors: Theory and Device Applications

✍ Scribed by Yongke Sun, Scott E. Thompson, Toshikazu Nishida (auth.)

• Publisher: Springer US
• Year: 2010
• Tongue: English
• Leaves: 353
• Edition: 1
• Category: Library

✦ Synopsis

Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. The book discusses relevant applications of strain while also focusing on the fundamental physics as they pertain to bulk, planar, and scaled nano-devices. Lead authors Yongke Sun, Scott Thompson and Toshikazu Nishida also:

• Treat strain physics at both the qualitative overview level as well as provide detailed fundamentals
• Explain strain physics relevant to logic devices as well as strain-based MEMS

This book is relevant to current strained Si logic technology, as well as for understanding the physics and scaling of future strain nano-scale devices. It is perfect for practicing device engineers at semiconductor manufacturers, as well as graduate students studying device physics at universities.

✦ Table of Contents

Front Matter....Pages 1-10
Overview: The Age of Strained Devices....Pages 1-6
Front Matter....Pages 8-8
Stress, Strain, Piezoresistivity, and Piezoelectricity....Pages 9-21
Strain and Semiconductor Crystal Symmetry....Pages 23-49
Band Structures of Strained Semiconductors....Pages 51-135
Low-Dimensional Semiconductor Structures....Pages 137-182
Front Matter....Pages 184-184
Semiconductor Transport....Pages 185-232
Front Matter....Pages 234-234
Strain in Electron Devices....Pages 235-266
Piezoresistive Strain Sensors....Pages 267-290
Strain Effects on Optoelectronic Devices....Pages 291-325
Back Matter....Pages 1-23

✦ Subjects

Electronics and Microelectronics, Instrumentation;Solid State Physics;Spectroscopy and Microscopy;Optical and Electronic Materials