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Strain-compensated InGa(As)P-InAsP active regions for 1.3-μm wavelength lasers

✍ Scribed by Dries, J.C.; Gokhale, M.R.; Uenohara, H.; Forrest, S.R.

Book ID: 119786518
Publisher: IEEE
Year: 1998
Tongue: English
Weight: 80 KB
Volume: 10
Category: Article
ISSN: 1041-1135
DOI: 10.1109/68.651096

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