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Strain compensated 1120 nm GaInAs/GaAs vertical external-cavity surface-emitting laser grown by molecular beam epitaxy

✍ Scribed by Sanna Ranta; Teemu Hakkarainen; Miki Tavast; Jukka Lindfors; Tomi Leinonen; Mircea Guina

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Strain compensated 1120&#xa0;nm GaInAs/GaAs vertical external-cavity surface-emitting laser grown by molecular beam epitaxy