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Strain characterisation of shallow trench isolation structures on a nanometer scale by convergent beam electron diffraction

โœ Scribed by A. Armigliato; R. Balboni; S. Frabboni; A. Benedetti; A.G. Cullis; G.P. Carnevale; P. Colpani; G. Pavia


Book ID
104420502
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
167 KB
Volume
4
Category
Article
ISSN
1369-8001

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Silicides, widely used as contacts in complementary MOS (CMOS) devices, are expected to introduce large distortions in the underlying silicon, which may have an impact on the device performances. In this work, we employed the convergent beam electron diffraction (CBED) technique in a TEM to map stre