Nanometer scale characterisation of CoSi
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A. Benedetti; H. Bender; C. Torregiani; M. Van Dal; K. Maex
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Article
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2004
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Elsevier Science
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English
โ 435 KB
Silicides, widely used as contacts in complementary MOS (CMOS) devices, are expected to introduce large distortions in the underlying silicon, which may have an impact on the device performances. In this work, we employed the convergent beam electron diffraction (CBED) technique in a TEM to map stre