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STM observation of rapidly cooled Si(111) vicinal surfaces

โœ Scribed by F. Katsuki; K. Kamei


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
381 KB
Volume
94-95
Category
Article
ISSN
0169-4332

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In situ STM imaging of high temperature
โœ A. Feltz; U. Memmert; R.J. Behm ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 665 KB

Gas phase etching of Si( 111) (7 x 7) surfaces, by reaction with O2 at zz 950 K, was directly followed by in situ STM imaging. The reaction mechanism was found to strongly depend on the density of structural defects in the respective (7 X 7) surface layer, which can act as nucleation centers for pit