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STM examination of O2 etching on graphite surfaces in air

✍ Scribed by Dong-ke Zhang; Ting Li; Guy F. Cotterill; D.J. O'Connor; Terry F. Wall


Book ID
107756845
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
68 KB
Volume
73
Category
Article
ISSN
0016-2361

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## Abstract Even for samples exhibiting excellent electronic properties in terms of carrier mobility, sample‐to‐sample variability remains considerable and dislocation density is still very high, the latter characteristic being often related to damages induced either by the substrate polishing step