STM and photoelectron spectroscopy studies of silicon-cerium dioxide interface formation

✍ Scribed by M Goshtasbi Rad; B Hirschauer; M Göthelid; UO Karlsson

• Book ID: 104265972
• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 833 KB
• Volume: 49
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(97)00174-7

✦ Synopsis

Scanning tunnelling microscopy

(STMI and photoelectron spectroscopy (PESI have been used to investigate the initial growth of cerium dioxide on the Si(7 1 I! 7 x 7 surface at room temperature.

The Si adatom structure is disrupted and chemically reacted by cerium oxide adsorption.

Both Si 2p core level spectra as well as the STM images show that the adatoms and piedestal atoms serve as the primary reaction site at low coverage. A multitude of adsorbate induced configurations are found by STM on the surface: atomic oxygen inserted into the adatom back bond, atomic Ce in hollow sites and a variety of CeO,.