Stimulated emission at 300 K from photopumped GaN grown by plasma-assisted molecular beam epitaxy with an inductively coupled plasma source

✍ Scribed by Gluschenkov, O.; Myoung, J. M.; Shim, K. H.; Kim, K.; Figen, Z. G.; Gao, J.; Eden, J. G.

• Book ID: 118261704
• Publisher: American Institute of Physics
• Year: 1997
• Tongue: English
• Weight: 387 KB
• Volume: 70
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.118230