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Stepped structure on the {0001} facet plane of α-SiC

✍ Scribed by Noboru Ohtani; Masakazu Katsuno; Jun Takahashi; Hirokatsu Yashiro; Masatoshi Kanaya

Book ID
117219169
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
449 KB
Volume
398
Category
Article
ISSN
0039-6028

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## Abstract 250 nm thick AlN layers without a nucleation layer were grown directly on 6H‐SiC(0001) with 3‐bilayer‐height steps by rf‐plasma‐assisted molecular‐beam epitaxy. The structure and morphology of the AlN layers have been studied using atomic force microscopy, X‐ray diffraction and transmis