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Step-height-tripling transition on vicinal Si(111)

โœ Scribed by Phaneuf, R. J.; Williams, Ellen D.


Book ID
118055267
Publisher
The American Physical Society
Year
1990
Tongue
English
Weight
891 KB
Volume
41
Category
Article
ISSN
1098-0121

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During deposition of Ga atoms, the structure of a Si(111) vicinal face is transformed from the ffiffiffi 3 p ร‚ ffiffiffi 3 p structure to the 6.3 ร‚ 6.3 structure. The transformation occurs preferentially from the lower side of steps. Since the density of Si atoms needed to form the 6.3 ร‚ 6.3 structu