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Step bunching on the vicinal GaN(0001) surface

✍ Scribed by Ramana Murty, M. V.; Fini, P.; Stephenson, G. B.; Thompson, Carol; Eastman, J. A.; Munkholm, A.; Auciello, O.; Jothilingam, R.; DenBaars, S. P.; Speck, J. S.

Book ID
118034017
Publisher
The American Physical Society
Year
2000
Tongue
English
Weight
141 KB
Volume
62
Category
Article
ISSN
1098-0121

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MOVPE homoepitaxial growth on vicinal Ga
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## Abstract Homoepitaxial growth of GaN by metal organic vapor phase epitaxy (MOVPE) was systematically evaluated using nominal __c__‐plane and various vicinal GaN(0001) wafers: 1Β°, 2Β°, 4Β°, and 8Β° offcut in the directions of γ€ˆ10$\bar 1$0〉 and γ€ˆ11$\bar 2$0〉. It was found that a hillock morphology fo