Statistical analysis of vanadium in gallium arsenide

✍ Scribed by Rebey, A. ;Bchetnia, A. ;Jani, B. El

• Book ID: 105363403
• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 235 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200521230

✦ Synopsis

Abstract

The electrical properties of vanadium‐doped GaAs grown by metalorganic vapor phase epitaxy were studied between 77 and 300 K. The temperature‐dependent electron concentration, for different partial pressures of VCl~4~, was simulated using the charge balance equation. A calculation model was used with parameters (energy levels and V concentration) derived from photoluminescence, deep‐level transient spectroscopy and secondary ion mass spectroscopy measurements. The magnitude and the temperature dependence of neutral and ionized V concentrations were determined. It is shown that most of the V concentration is inactive. This is in good agreement with some previous reports in the literature. The detailed analysis including the probability of V donor incorporation in GaAs was then extended to explain the evolution of electron concentration as a function of partial pressure of VCl~4~. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)