Stationary solutions to an energy model for semiconductor devices where the equations are defined on different domains
✍ Scribed by Annegret Glitzky; Rolf Hünlich
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 238 KB
- Volume
- 281
- Category
- Article
- ISSN
- 0025-584X
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✦ Synopsis
Abstract
We discuss a stationary energy model from semiconductor modelling. We accept the more realistic assumption that the continuity equations for electrons and holes have to be considered only in a subdomain Ω~0~ of the domain of definition Ω of the energy balance equation and of the Poisson equation. Here Ω~0~ corresponds to the region of semiconducting material, Ω \ Ω~0~ represents passive layers. Metals serving as contacts are modelled by Dirichlet boundary conditions.
We prove a local existence and uniqueness result for the two‐dimensional stationary energy model. For this purpose we derive a W^1,p^ ‐regularity result for solutions of systems of elliptic equations with different regions of definition and use the Implicit Function Theorem. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)